RCP1565SL1 Specs and Replacement
Type Designator: RCP1565SL1
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Package: TO220
RCP1565SL1 Substitution - IGBT ⓘ Cross-Reference Search
RCP1565SL1 datasheet
rcf1565sl1 rcp1565sl1 rcb1565sl1 rcd1565sl1.pdf
IGBT RCF(P/B/D)1565SL1 RCF1565SL1 RCP1565SL1 RCB1565SL1 RCD1565SL1 15A 650V IGBT UPS PFC 15A 650V , V =1.8V @I =15A CE(sat) C ... See More ⇒
Specs: SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , GT30F126 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 .
History: RCB1565SL1 | KGT12N120NDH | NGB8207AN | IRG8P50N120KD
Keywords - RCP1565SL1 transistor spec
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History: RCB1565SL1 | KGT12N120NDH | NGB8207AN | IRG8P50N120KD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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