All IGBT. KGF65A6H Datasheet

 

KGF65A6H IGBT. Datasheet pdf. Equivalent


   Type Designator: KGF65A6H
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 405
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 70
   Collector Capacity (Cc), typ, pF: 330
   Total Gate Charge (Qg), typ, nC: 110
   Package: TO247

 KGF65A6H Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KGF65A6H Datasheet (PDF)

 ..1. Size:637K  sanken-ele
 kgf65a6h mgf65a6h.pdf

KGF65A6H KGF65A6H

VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A6H, MGF65A6H Data Sheet Description Packages The KGF65A6H and MGF65A6H are 650 V Field TO247-3L TO3P-3L Stop IGBTs. Sanken original trench structure decreases (4) (4) gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the effic

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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