All IGBT. GT30J122A Datasheet

 

GT30J122A IGBT. Datasheet pdf. Equivalent


   Type Designator: GT30J122A
   Type: IGBT
   Marking Code: 30J122A
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 120 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 9 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 200 nS
   Package: TO3PN

 GT30J122A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT30J122A Datasheet (PDF)

 ..1. Size:192K  toshiba
 gt30j122a.pdf

GT30J122A GT30J122A

GT30J122ADiscrete IGBTs Silicon N-Channel IGBTGT30J122AGT30J122AGT30J122AGT30J122A1. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. F

 6.1. Size:321K  toshiba
 gt30j122.pdf

GT30J122A GT30J122A

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit: mmCURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed: tf = 0.25s (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristic Symbol Rating UnitColl

 7.1. Size:182K  toshiba
 gt30j121.pdf

GT30J122A GT30J122A

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ

 7.2. Size:187K  toshiba
 gt30j126.pdf

GT30J122A GT30J122A

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 s (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) =

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