GD100HFX65C1S PDF and Equivalents Search

 

GD100HFX65C1S Specs and Replacement

Type Designator: GD100HFX65C1S

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 319 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 127 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Package: MODULE

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GD100HFX65C1S datasheet

 ..1. Size:165K  cn starpower
gd100hfx65c1s.pdf pdf_icon

GD100HFX65C1S

GD100HFX65C1S IGBT Module STARPOWER SEMICONDUCTOR IGBT GD100HFX65C1S 650V/100A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features Low VCE(sat) Trench IGBT technology 6 s short circuit capability ... See More ⇒

 9.1. Size:1160K  cn hunteck
hgd100n12sl.pdf pdf_icon

GD100HFX65C1S

HGD100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 102 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free Application Synchronous Rectification in... See More ⇒

 9.2. Size:819K  cn hunteck
hgd100n12s.pdf pdf_icon

GD100HFX65C1S

HGD100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-252 8.6 RDS(on),typ m Enhanced Body diode dv/dt capability 102 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed C... See More ⇒

Specs: RCD1565SL1 , KGF65A6H , MGF65A6H , RJH65T14DPQ-A0 , GT30J122A , GT60M324 , DG25X12T2 , DG40X12T2 , IRG7R313U , GD75HFF120C1S , SL40T65FL , BG75B12UX3-I , BG100B12UX3-I , BG150B12LY2-I , BG150B12UY3-I , BG200B12UY3-I , MPBW25N120B .

History: HIA30N140IH-DA | ISL9V5045S3ST-F085

Keywords - GD100HFX65C1S transistor spec

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