MPBW25N120B Specs and Replacement
Type Designator: MPBW25N120B
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 37 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Package: TO247
MPBW25N120B Substitution - IGBTⓘ Cross-Reference Search
MPBW25N120B datasheet
mpbw25n120b.pdf
MPBW25N120B 1200V 25A IGBT TO-247 MPBW25N120B MP25N120B TO 247 1 V... See More ⇒
mpbw25n120bf.pdf
MPBW25N120BF 1200V-25A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Frequency converter positive temperature coefficient in VCEsat UPS Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBW25N120BF MP25N120BF TO-247-3 Maximum Rated Values ... See More ⇒
mpbp20n65ef mpba20n65ef mpbc20n65ef mpbw20n65ef mpbt20n65ef.pdf
MPBX20N65EF 650V-20A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code MPBP20N65EF MP20N65EF TO-220 MPBA20N65EF MP20N65EF TO-220F MPBC20N6... See More ⇒
Specs: GD100HFX65C1S, GD75HFF120C1S, SL40T65FL, BG75B12UX3-I, BG100B12UX3-I, BG150B12LY2-I, BG150B12UY3-I, BG200B12UY3-I, CRG60T60AK3HD, MPBW40N60BF, MPBW40N65BH, MPFF100R12RB, MPFF50R12RB, MPFF75R12RB, RGPR20NS43, RGS80TSX2DHR, RGT50NL65D
Keywords - MPBW25N120B transistor spec
MPBW25N120B cross reference
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History: STGW35NB60SD | NCE40TD120VTP | AOK40B65HQ3 | RJH1CD6DPQ-E0 | JT010N065WED | NCE40TD60BP | IXXH50N60C3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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