MPFF100R12RB Datasheet and Replacement
Type Designator: MPFF100R12RB
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 446 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 59 nS
Qg ⓘ - Total Gate Charge, typ: 416 nC
Package: MODULE
MPFF100R12RB substitution
MPFF100R12RB Datasheet (PDF)
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: CRG40T60AK3H | STGFW20V60DF
Keywords - MPFF100R12RB transistor datasheet
MPFF100R12RB cross reference
MPFF100R12RB equivalent finder
MPFF100R12RB lookup
MPFF100R12RB substitution
MPFF100R12RB replacement
History: CRG40T60AK3H | STGFW20V60DF



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