All IGBT. RGS80TSX2DHR Datasheet

 

RGS80TSX2DHR IGBT. Datasheet pdf. Equivalent


   Type Designator: RGS80TSX2DHR
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 555 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 161 pF
   Qgⓘ - Total Gate Charge, typ: 104 nC
   Package: TO247

 RGS80TSX2DHR Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

RGS80TSX2DHR Datasheet (PDF)

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 rgs80tsx2dhr.pdf

RGS80TSX2DHR RGS80TSX2DHR

RGS80TSX2DHR1200V 40A Field Stop Trench IGBT DatasheetOutline TO-247NVCES1200VIC (100C)40AVCE(sat) (Typ.)1.7VPD555W(1) (2)(3)Inner Circuit(2)Features(1) Gate(2) Collector1) Low Collector - Emitter Saturation Voltage *1(3) Emitter(1)2) Short Circuit Withstand Time 10s*1 Built in FRD3) Qualified to AEC-Q101(3)4) Built in Very Fast & S

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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