All IGBT. RGS80TSX2DHR Datasheet

 

RGS80TSX2DHR Datasheet and Replacement


   Type Designator: RGS80TSX2DHR
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 555 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 161 pF
   Qgⓘ - Total Gate Charge, typ: 104 nC
   Package: TO247
      - IGBT Cross-Reference

 

RGS80TSX2DHR Datasheet (PDF)

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RGS80TSX2DHR

RGS80TSX2DHR1200V 40A Field Stop Trench IGBT DatasheetOutline TO-247NVCES1200VIC (100C)40AVCE(sat) (Typ.)1.7VPD555W(1) (2)(3)Inner Circuit(2)Features(1) Gate(2) Collector1) Low Collector - Emitter Saturation Voltage *1(3) Emitter(1)2) Short Circuit Withstand Time 10s*1 Built in FRD3) Qualified to AEC-Q101(3)4) Built in Very Fast & S

Datasheet: BG200B12UY3-I , MPBW25N120B , MPBW40N60BF , MPBW40N65BH , MPFF100R12RB , MPFF50R12RB , MPFF75R12RB , RGPR20NS43 , SGH80N60UFD , RGT50NL65D , RGT50NS65D , RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , BT15T60A8F , BT15T60A9F , BT25T120CKR .

History: 1MBI300F-060 | IKQ100N60T | BG100B12UX3-I | IXGK120N120B3 | IXGX12N90C | IXGH17N100U1 | IXGP12N100AU1

Keywords - RGS80TSX2DHR transistor datasheet

 RGS80TSX2DHR cross reference
 RGS80TSX2DHR equivalent finder
 RGS80TSX2DHR lookup
 RGS80TSX2DHR substitution
 RGS80TSX2DHR replacement

 

 
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