BT15T120CNR IGBT. Datasheet pdf. Equivalent

   Type Designator: BT15T120CNR
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 156 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 32 nS
   Coesⓘ - Output Capacitance, typ: 35 pF
   Qgⓘ - Total Gate Charge, typ: 81.5 nC
   Package: TO3P

BT15T120CNR Transistor Equivalent Substitute - IGBT Cross-Reference Search

BT15T120CNR Datasheet (PDF)

..1. Size:261K wuxi china
bt15t120cnr.pdf

Silicon FS Trench IGBT RBT15T120 CNR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness.Features Trench FS T

6.1. Size:557K crhj
bt15t120anf.pdf

Silicon FS Planar IGBT R BT15T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features Trench FS Technology, Positive temperature coe

6.2. Size:557K wuxi china
bt15t120anf.pdf