BT15T120CNR IGBT. Datasheet pdf. Equivalent

   Type Designator: BT15T120CNR
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 156
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 32
   Collector Capacity (Cc), typ, pF: 35
   Total Gate Charge (Qg), typ, nC: 81.5
   Package: TO3P

BT15T120CNR Transistor Equivalent Substitute - IGBT Cross-Reference Search

BT15T120CNR Datasheet (PDF)

..1. Size:261K wuxi china
bt15t120cnr.pdf

Silicon FS Trench IGBT RBT15T120 CNR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness.Features Trench FS T

6.1. Size:557K crhj
bt15t120anf.pdf

Silicon FS Planar IGBT R BT15T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features Trench FS Technology, Positive temperature coe

6.2. Size:557K wuxi china
bt15t120anf.pdf