All IGBT. BT15T60A8F Datasheet

 

BT15T60A8F Datasheet and Replacement


   Type Designator: BT15T60A8F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 96 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qg ⓘ - Total Gate Charge, typ: 59 nC
   Package: TO220
 

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BT15T60A8F Datasheet (PDF)

 ..1. Size:600K  wuxi china
 bt15t60a8f bt15t60a9f.pdf pdf_icon

BT15T60A8F

R BT15T60A8F, BT15T60A9F VCES 600 V BT15T60A8F BT15T60A9F IC 15 A RoHS VCE(sat) 1.7 V TO-220AB

 9.1. Size:557K  crhj
 bt15t120anf.pdf pdf_icon

BT15T60A8F

Silicon FS Planar IGBT R BT15T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features Trench FS Technology, Positive temperature coe

 9.2. Size:261K  wuxi china
 bt15t120cnr.pdf pdf_icon

BT15T60A8F

Silicon FS Trench IGBT RBT15T120 CNR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 15 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 156 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness.Features Trench FS T

 9.3. Size:557K  wuxi china
 bt15t120anf.pdf pdf_icon

BT15T60A8F

Silicon FS Planar IGBT R BT15T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features Trench FS Technology, Positive temperature coe

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Datasheet: MPFF75R12RB , RGPR20NS43 , RGS80TSX2DHR , RGT50NL65D , RGT50NS65D , RGT80TS65DGC13 , RGTH60TS65DGC13 , BT15T120CNR , IKW50N60H3 , BT15T60A9F , BT25T120CKR , BT40T120CKF , BT50T60ANFK , BT60T60ANFK , DGTD120T25S1PT , DGTD120T40S1PT , DGTD65T15H2TF .

History: IGB20N65S5 | APT200GN60B2G | IKP30N65H5 | IKP39N65ES5

Keywords - BT15T60A8F transistor datasheet

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