All IGBT. DGTD65T15H2TF Datasheet

 

DGTD65T15H2TF Datasheet and Replacement


   Type Designator: DGTD65T15H2TF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 48 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 31 pF
   Qg ⓘ - Total Gate Charge, typ: 61 nC
   Package: TO220F
 

 DGTD65T15H2TF substitution

   - IGBT ⓘ Cross-Reference Search

 

DGTD65T15H2TF Datasheet (PDF)

 ..1. Size:1787K  diodes
dgtd65t15h2tf.pdf pdf_icon

DGTD65T15H2TF

DGTD65T15H2TF Green650V FIELD STOP IGBT IN ITO220AB Description Features The DGTD65T15H2TF is produced using advanced Field Stop Trench High Ruggedness for Motor Control IGBT Technology, which provides high-performance, excellent quality, VCE(sat) Positive Temperature Coefficient and high ruggedness. Very Soft, Fast Recovery Anti-Parallel Diode Low EMI Maxi

 7.1. Size:1639K  diodes
dgtd65t50s1pt.pdf pdf_icon

DGTD65T15H2TF

DGTD65T50S1PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T50S1PT is produced using advanced Field Stop Trench High-Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high-switching VCE(sat) = 1.85V @ IC = 50A performance. High Input Impedance trr = 80ns (typ) @ diF/dt = 1000A/s Eoff = 0.55mJ @ TC=25C

 7.2. Size:1340K  diodes
dgtd65t40s2pt.pdf pdf_icon

DGTD65T15H2TF

DGTD65T40S2PT Green650V FIELD STOP IGBT IN TO247 (Type MC) Description Features The DGTD65T40S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high switching VCE(SAT) = 1.8V @ IC = 40A performance. tRR = 60ns (Typ) @ diF/dt = 820A/s C EOFF = 0.4mJ @ TC = +25 Ma

 7.3. Size:1584K  diodes
dgtd65t60s2pt.pdf pdf_icon

DGTD65T15H2TF

DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T60S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT 2nd Generation Technology, which not only gives high-switching VCE(sat) = 1.85V @ IC = 60A efficiency, but is also extremely rugged and excellent quality for High Input Impedance applications where low

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: CM150RL-24NF | CM150RX-12A

Keywords - DGTD65T15H2TF transistor datasheet

 DGTD65T15H2TF cross reference
 DGTD65T15H2TF equivalent finder
 DGTD65T15H2TF lookup
 DGTD65T15H2TF substitution
 DGTD65T15H2TF replacement

 

 
Back to Top

 


 
.