DGTD65T15H2TF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: DGTD65T15H2TF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 48 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 27 nS
Coesⓘ - Выходная емкость, типовая: 31 pF
Qgⓘ - Общий заряд затвора, typ: 61 nC
Тип корпуса: TO220F
Аналог (замена) для DGTD65T15H2TF
DGTD65T15H2TF Datasheet (PDF)
dgtd65t15h2tf.pdf
DGTD65T15H2TF Green650V FIELD STOP IGBT IN ITO220AB Description Features The DGTD65T15H2TF is produced using advanced Field Stop Trench High Ruggedness for Motor Control IGBT Technology, which provides high-performance, excellent quality, VCE(sat) Positive Temperature Coefficient and high ruggedness. Very Soft, Fast Recovery Anti-Parallel Diode Low EMI Maxi
dgtd65t50s1pt.pdf
DGTD65T50S1PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T50S1PT is produced using advanced Field Stop Trench High-Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high-switching VCE(sat) = 1.85V @ IC = 50A performance. High Input Impedance trr = 80ns (typ) @ diF/dt = 1000A/s Eoff = 0.55mJ @ TC=25C
dgtd65t40s2pt.pdf
DGTD65T40S2PT Green650V FIELD STOP IGBT IN TO247 (Type MC) Description Features The DGTD65T40S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT Technology, which provides excellent quality and high switching VCE(SAT) = 1.8V @ IC = 40A performance. tRR = 60ns (Typ) @ diF/dt = 820A/s C EOFF = 0.4mJ @ TC = +25 Ma
dgtd65t60s2pt.pdf
DGTD65T60S2PT 650V FIELD STOP IGBT IN TO-247 Description Features The DGTD65T60S2PT is produced using advanced Field Stop Trench High Speed Switching & Low Power Loss IGBT 2nd Generation Technology, which not only gives high-switching VCE(sat) = 1.85V @ IC = 60A efficiency, but is also extremely rugged and excellent quality for High Input Impedance applications where low
Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2