KWBW60N65F4EG Datasheet and Replacement
Type Designator: KWBW60N65F4EG
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 517 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 121 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: TO247
- IGBT Cross-Reference
KWBW60N65F4EG Datasheet (PDF)
kwbw60n65f4eg.pdf
KWBW60N65F4EG650V 60A IGBTTO-247ECG1 V650 V-CET =25 I100C CT =
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMG75J120U6HN | 2SH29
Keywords - KWBW60N65F4EG transistor datasheet
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History: MMG75J120U6HN | 2SH29
LIST
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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