KWBW60N65F4EG Specs and Replacement
Type Designator: KWBW60N65F4EG
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 517 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 121 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Package: TO247
KWBW60N65F4EG Substitution - IGBT ⓘ Cross-Reference Search
KWBW60N65F4EG datasheet
kwbw60n65f4eg.pdf
KWBW60N65F4EG 650V 60A IGBT TO-247 E C G 1 V 650 V - CE T =25 I 100 C C T =... See More ⇒
Specs: KGF75N65KDF, LEGM200BA120L2H, LEGM200BH120L2K, LEGM25BE120E2H, LEGM300BH120L2K, LEGM75BE120L5H, LEGM75BF120L5H, LEGM75TD120E2H, MBQ40T65FDSC, KWFFP10R12NS3, KWGFP25R12NS3, KWMFP40R12NS3, KWRFF100R12SWM, KWRFF40R12SWM, KWRFF50R12SWM, KWRFF75R12SWM, MG100HF12MIC1
Keywords - KWBW60N65F4EG transistor spec
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History: KWGFP25R12NS3
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