KWMFP40R12NS3 Specs and Replacement
Type Designator: KWMFP40R12NS3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 192 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
tr ⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 169 pF
Package: MODULE KWMFP40R12NS3 Substitution - IGBT ⓘ Cross-Reference Search
KWMFP40R12NS3 datasheet
Specs: LEGM25BE120E2H , LEGM300BH120L2K , LEGM75BE120L5H , LEGM75BF120L5H , LEGM75TD120E2H , KWBW60N65F4EG , KWFFP10R12NS3 , KWGFP25R12NS3 , FGL60N100BNTD , KWRFF100R12SWM , KWRFF40R12SWM , KWRFF50R12SWM , KWRFF75R12SWM , MG100HF12MIC1 , MG100HF12MRC1 , MG100UZ12MRGJ , MG150HF12MIC2 .
History: LEGM25BE120E2H
Keywords - KWMFP40R12NS3 transistor spec
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History: LEGM25BE120E2H
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Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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