KWMFP40R12NS3 Datasheet. Specs and Replacement

Type Designator: KWMFP40R12NS3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 192 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 150 nS

Coesⓘ - Output Capacitance, typ: 169 pF

Package: MODULE

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KWMFP40R12NS3 datasheet

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 kwmfp40r12ns3.pdf pdf_icon

KWMFP40R12NS3

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Specs: LEGM25BE120E2H, LEGM300BH120L2K, LEGM75BE120L5H, LEGM75BF120L5H, LEGM75TD120E2H, KWBW60N65F4EG, KWFFP10R12NS3, KWGFP25R12NS3, GT30F133, KWRFF100R12SWM, KWRFF40R12SWM, KWRFF50R12SWM, KWRFF75R12SWM, MG100HF12MIC1, MG100HF12MRC1, MG100UZ12MRGJ, MG150HF12MIC2

Keywords - KWMFP40R12NS3 transistor spec

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