KWMFP40R12NS3 Datasheet and Replacement
Type Designator: KWMFP40R12NS3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 192 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 169 pF
Package: MODULE
- IGBT Cross-Reference
KWMFP40R12NS3 Datasheet (PDF)
kwmfp40r12ns3.pdf
KWMFP40R12NS31200V 40A PIMIGBTNTC100% RBSOA(2*IC)(VCE=2.0V) (Eoff=2.05mJ)(>10us) IGBT()T =25C
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - KWMFP40R12NS3 transistor datasheet
KWMFP40R12NS3 cross reference
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History: MG25Q6ES51 | 7MBR75U2B060
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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