All IGBT. KWRFF50R12SWM Datasheet

 

KWRFF50R12SWM IGBT. Datasheet pdf. Equivalent


   Type Designator: KWRFF50R12SWM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 313
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.1(typ)
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 1130
   Collector Capacity (Cc), typ, pF: 318
   Total Gate Charge (Qg), typ, nC: 427
   Package: MODULE

 KWRFF50R12SWM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KWRFF50R12SWM Datasheet (PDF)

 ..1. Size:1814K  cn junshine
 kwrff50r12swm.pdf

KWRFF50R12SWM KWRFF50R12SWM

KWRFF50R12SWM1200V 50A IGBT IGBT100% RBSOA2*ICVCE=1.70V (Eoff=4.0mJ)>10usIGBT()T =25j

 9.1. Size:1839K  cn junshine
 kwrff40r12swm.pdf

KWRFF50R12SWM KWRFF50R12SWM

KWRFF40R12SWM1200V 40A IGBT IGBT100% RBSOA2*ICVCE=1.96V (Eoff=1.28mJ)IGBT()T =25j V 1200-

 9.2. Size:1902K  cn junshine
 kwrff75r12swm.pdf

KWRFF50R12SWM KWRFF50R12SWM

KWRFF75R12SWM1200V 75A IGBT IGBT100% RBSOA2*ICVCE=1.83V (Eoff=4.63mJ)>10usIGBT()T =25j

 9.3. Size:1294K  cn junshine
 kwrff100r12swm.pdf

KWRFF50R12SWM KWRFF50R12SWM

KWRFF100R12SWM1200V 100A IGBT IGBT100% RBSOA2*ICVCE=2.0V (Eoff=6.28mJ)>10usIGBT()T =25j

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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