KWRFF50R12SWM Specs and Replacement
Type Designator: KWRFF50R12SWM
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 313 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 1130 nS
Coesⓘ - Output Capacitance, typ: 318 pF
Package: MODULE KWRFF50R12SWM Substitution - IGBTⓘ Cross-Reference Search
KWRFF50R12SWM datasheet
kwrff50r12swm.pdf
KWRFF50R12SWM 1200V 50A IGBT IGBT 100% RBSOA 2*IC VCE=1.70V (Eoff=4.0mJ) >10us IGBT( ) T =25 j ... See More ⇒
Specs: LEGM75BF120L5H, LEGM75TD120E2H, KWBW60N65F4EG, KWFFP10R12NS3, KWGFP25R12NS3, KWMFP40R12NS3, KWRFF100R12SWM, KWRFF40R12SWM, TGD30N40P, KWRFF75R12SWM, MG100HF12MIC1, MG100HF12MRC1, MG100UZ12MRGJ, MG150HF12MIC2, MG150HF12MRC2, MG200HF12MIC2, MG200HF12MRC2
Keywords - KWRFF50R12SWM transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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