All IGBT. KWRFF50R12SWM Datasheet

 

KWRFF50R12SWM IGBT. Datasheet pdf. Equivalent


   Type Designator: KWRFF50R12SWM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 313 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.1(typ) V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 1130 nS
   Coesⓘ - Output Capacitance, typ: 318 pF
   Qgⓘ - Total Gate Charge, typ: 427 nC
   Package: MODULE

 KWRFF50R12SWM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

KWRFF50R12SWM Datasheet (PDF)

 ..1. Size:1814K  cn junshine
 kwrff50r12swm.pdf

KWRFF50R12SWM KWRFF50R12SWM

KWRFF50R12SWM1200V 50A IGBT IGBT100% RBSOA2*ICVCE=1.70V (Eoff=4.0mJ)>10usIGBT()T =25j

 9.1. Size:1839K  cn junshine
 kwrff40r12swm.pdf

KWRFF50R12SWM KWRFF50R12SWM

KWRFF40R12SWM1200V 40A IGBT IGBT100% RBSOA2*ICVCE=1.96V (Eoff=1.28mJ)IGBT()T =25j V 1200-

 9.2. Size:1902K  cn junshine
 kwrff75r12swm.pdf

KWRFF50R12SWM KWRFF50R12SWM

KWRFF75R12SWM1200V 75A IGBT IGBT100% RBSOA2*ICVCE=1.83V (Eoff=4.63mJ)>10usIGBT()T =25j

 9.3. Size:1294K  cn junshine
 kwrff100r12swm.pdf

KWRFF50R12SWM KWRFF50R12SWM

KWRFF100R12SWM1200V 100A IGBT IGBT100% RBSOA2*ICVCE=2.0V (Eoff=6.28mJ)>10usIGBT()T =25j

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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