MG75U12MRGJ IGBT. Datasheet pdf. Equivalent
Type Designator: MG75U12MRGJ
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 420 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Qgⓘ - Total Gate Charge, typ: 780 nC
Package: SOT227
MG75U12MRGJ Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG75U12MRGJ Datasheet (PDF)
mg75u12mrgj.pdf
RoHS MG75U12MRGJ COMPLIANT IGBT Modules VRRM 1200V IFAV 75 A Applications Invertor Uninterruptible Power Supply (UPS) Convertor Welder SMPS Convertor Circuit Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness Fully isolated package High Short Circuit Capability Popular SOT-227 Package
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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