MG75U12MRGJ Datasheet and Replacement
Type Designator: MG75U12MRGJ
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 420 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 70 nS
Qg ⓘ - Total Gate Charge, typ: 780 nC
Package: SOT227
MG75U12MRGJ substitution
MG75U12MRGJ Datasheet (PDF)
mg75u12mrgj.pdf
RoHS MG75U12MRGJ COMPLIANT IGBT Modules VRRM 1200V IFAV 75 A Applications Invertor Uninterruptible Power Supply (UPS) Convertor Welder SMPS Convertor Circuit Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness Fully isolated package High Short Circuit Capability Popular SOT-227 Package
Datasheet: MG150HF12MIC2 , MG150HF12MRC2 , MG200HF12MIC2 , MG200HF12MRC2 , MG400HF12MIC2 , MG400HF12MRC2 , MG75HF12MIC1 , MG75HF12MRC1 , IRGP4062D , MSG100T65HLB3 , MSG100T65HLC1 , MSG120T65HLC1 , MSG15T120FPC , MSG15T120FPE , MSG15T65FL , MSG15T65FLT , MSG15T65FLE .
History: FGA15N120ANTDTU | GD100HFX65C1S
Keywords - MG75U12MRGJ transistor datasheet
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History: FGA15N120ANTDTU | GD100HFX65C1S
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