MG75U12MRGJ Specs and Replacement
Type Designator: MG75U12MRGJ
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 420 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: SOT227
MG75U12MRGJ Substitution - IGBTⓘ Cross-Reference Search
MG75U12MRGJ datasheet
mg75u12mrgj.pdf
RoHS MG75U12MRGJ COMPLIANT IGBT Modules VRRM 1200V IFAV 75 A Applications Invertor Uninterruptible Power Supply (UPS) Convertor Welder SMPS Convertor Circuit Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness Fully isolated package High Short Circuit Capability Popular SOT-227 Package... See More ⇒
Specs: MG150HF12MIC2, MG150HF12MRC2, MG200HF12MIC2, MG200HF12MRC2, MG400HF12MIC2, MG400HF12MRC2, MG75HF12MIC1, MG75HF12MRC1, IRG7S313U, MSG100T65HLB3, MSG100T65HLC1, MSG120T65HLC1, MSG15T120FPC, MSG15T120FPE, MSG15T65FL, MSG15T65FLT, MSG15T65FLE
Keywords - MG75U12MRGJ transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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