MG75U12MRGJ Datasheet and Replacement
Type Designator: MG75U12MRGJ
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 420 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Package: SOT227
- IGBT Cross-Reference
MG75U12MRGJ Datasheet (PDF)
mg75u12mrgj.pdf
RoHS MG75U12MRGJ COMPLIANT IGBT Modules VRRM 1200V IFAV 75 A Applications Invertor Uninterruptible Power Supply (UPS) Convertor Welder SMPS Convertor Circuit Features Ultra Low Loss Positive Temperature Coefficient High Ruggedness Fully isolated package High Short Circuit Capability Popular SOT-227 Package
Datasheet: MG150HF12MIC2 , MG150HF12MRC2 , MG200HF12MIC2 , MG200HF12MRC2 , MG400HF12MIC2 , MG400HF12MRC2 , MG75HF12MIC1 , MG75HF12MRC1 , FGPF4533 , MSG100T65HLB3 , MSG100T65HLC1 , MSG120T65HLC1 , MSG15T120FPC , MSG15T120FPE , MSG15T65FL , MSG15T65FLT , MSG15T65FLE .
History: IXXH100N60B3
Keywords - MG75U12MRGJ transistor datasheet
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History: IXXH100N60B3
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