CRG60T60AK3HD IGBT. Datasheet pdf. Equivalent

   Type Designator: CRG60T60AK3HD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G60T60AK3HD
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 483
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 120
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 124
   Collector Capacity (Cc), typ, pF: 224
   Total Gate Charge (Qg), typ, nC: 117
   Package: TO247

CRG60T60AK3HD Transistor Equivalent Substitute - IGBT Cross-Reference Search

CRG60T60AK3HD Datasheet (PDF)

..1. Size:972K crhj
crg60t60ak3hd.pdf

CRG60T60AK3HD CRG60T60AK3HD FS IGBT VCES 600 V IC 60 A RoHS 483 W Ptot TC=25VCE(sat) 1.85 V TO-247 FS VCE(sat),

..2. Size:1303K wuxi china
crg60t60ak3hd.pdf

Silicon FS Trench IGBT CRG60T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

2.1. Size:1259K wuxi china
crg60t60ak3h.pdf

Silicon FS Trench IGBT CRG60T60AK3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

3.1. Size:1275K wuxi china
crg60t60ak3sd.pdf

Silicon FS Trench IGBT CRG60T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.72 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

5.1. Size:1254K 1
crg60t60an3h.pdf

Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

5.2. Size:955K crhj
crg60t60an3h.pdf