CRG60T60AK3HD Todos los transistores

 

CRG60T60AK3HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CRG60T60AK3HD
   Tipo de transistor: IGBT + Diode
   Código de marcado: G60T60AK3HD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 483 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 124 nS
   Coesⓘ - Capacitancia de salida, typ: 224 pF
   Qgⓘ - Carga total de la puerta, typ: 117 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

CRG60T60AK3HD Datasheet (PDF)

 ..1. Size:972K  crhj
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CRG60T60AK3HD

CRG60T60AK3HD CRG60T60AK3HD FS IGBT VCES 600 V IC 60 A RoHS 483 W Ptot TC=25VCE(sat) 1.85 V TO-247 FS VCE(sat),

 ..2. Size:1303K  wuxi china
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CRG60T60AK3HD

Silicon FS Trench IGBT CRG60T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

 2.1. Size:1259K  wuxi china
crg60t60ak3h.pdf pdf_icon

CRG60T60AK3HD

Silicon FS Trench IGBT CRG60T60AK3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltag

 3.1. Size:1275K  wuxi china
crg60t60ak3sd.pdf pdf_icon

CRG60T60AK3HD

Silicon FS Trench IGBT CRG60T60AK3SD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.72 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

Otros transistores... CRG40T120AK3SD , CRG40T60AN3H , CRG40T60AN3HD , CRG40T60AK3HD , CRG40T65AK5H , CRG40T65AN5H , CRG40T65AK5HD , CRG40T65AN5HD , FGPF4633 , CRG75T60AK3HD , CRG75T65AK5HD , CRGMF100T120FSA3 , CRGMF50T120FSC , CRGMF75T120FSC , SPD15N65T1 , SPT10N120T1 , SPT15N120F1 .

History: FGA25N120ANTD | IHW20N120R3

 

 
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History: FGA25N120ANTD | IHW20N120R3

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