CRG40T120AK3SD Todos los transistores

 

CRG40T120AK3SD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CRG40T120AK3SD
   Tipo de transistor: IGBT + Diode
   Código de marcado: G40T120AK3SD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 333 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 47.5 nS
   Coesⓘ - Capacitancia de salida, typ: 131 pF
   Qgⓘ - Carga total de la puerta, typ: 208 nC
   Paquete / Cubierta: TO247

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CRG40T120AK3SD Datasheet (PDF)

 ..1. Size:1476K  crhj
crg40t120ak3sd.pdf

CRG40T120AK3SD
CRG40T120AK3SD

CRG40T120AK3SD CRG40T120AK3SD VCES 1200 V RoHS IC 40 A Ptot TC=25 333 W VCE(sat) 1.9 V ; TO-247

 ..2. Size:1472K  wuxi china
crg40t120ak3sd.pdf

CRG40T120AK3SD
CRG40T120AK3SD

Silicon FS Trench IGBT CRG40T120AK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

 1.1. Size:1512K  crhj
crg40t120ak3s.pdf

CRG40T120AK3SD
CRG40T120AK3SD

CRG40T120AK3S CRG40T120AK3S VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ; TO-247

 1.2. Size:1470K  wuxi china
crg40t120ak3s.pdf

CRG40T120AK3SD
CRG40T120AK3SD

Silicon FS Trench IGBT CRG40T120AK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

 5.1. Size:1273K  crhj
crg40t120bk3s.pdf

CRG40T120AK3SD
CRG40T120AK3SD

CRG40T120BK3S CRG40T120BK3SVCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ;TO-247

 5.2. Size:1015K  crhj
crg40t120bk3sd.pdf

CRG40T120AK3SD
CRG40T120AK3SD

CRG40T120BK3SD CRG40T120BK3SD VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V TO-247

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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