CRG40T120AK3SD - параметры транзистора, его аналоги, Даташиты

CRG40T120AK3SD Datasheet (PDF)

..1. Size:1476K crhj
crg40t120ak3sd.pdf pdf_icon

CRG40T120AK3SD CRG40T120AK3SD VCES 1200 V RoHS IC 40 A Ptot TC=25 333 W VCE(sat) 1.9 V ; TO-247

..2. Size:1472K wuxi china
crg40t120ak3sd.pdf pdf_icon

Silicon FS Trench IGBT CRG40T120AK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati

1.1. Size:1512K crhj
crg40t120ak3s.pdf pdf_icon

CRG40T120AK3S CRG40T120AK3S VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ; TO-247

1.2. Size:1470K wuxi china
crg40t120ak3s.pdf pdf_icon

Silicon FS Trench IGBT CRG40T120AK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio