CRG40T120AK3SD Spec and Replacement, IGBT Equivalent Finder, Cross Reference

CRG40T120AK3SD Specs and Replacement

Type Designator: CRG40T120AK3SD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 333 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 47.5 nS

Coesⓘ - Output Capacitance, typ: 131 pF

Package: TO247

CRG40T120AK3SD Substitution

- IGBT ⓘ Cross-Reference Search

CRG40T120AK3SD datasheet

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..2. Size:1472K wuxi china
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Silicon FS Trench IGBT CRG40T120AK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati... See More ⇒

1.1. Size:1512K crhj
crg40t120ak3s.pdf pdf_icon

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1.2. Size:1470K wuxi china
crg40t120ak3s.pdf pdf_icon

Silicon FS Trench IGBT CRG40T120AK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25 VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio... See More ⇒