CRG40T120AK3SD Datasheet and Replacement
Type Designator: CRG40T120AK3SD
Type: IGBT + Anti-Parallel Diode
Marking Code: G40T120AK3SD
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 333 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 47.5 nS
Coesⓘ - Output Capacitance, typ: 131 pF
Qg ⓘ - Total Gate Charge, typ: 208 nC
Package: TO247
CRG40T120AK3SD substitution
CRG40T120AK3SD Datasheet (PDF)
crg40t120ak3sd.pdf

CRG40T120AK3SD CRG40T120AK3SD VCES 1200 V RoHS IC 40 A Ptot TC=25 333 W VCE(sat) 1.9 V ; TO-247
crg40t120ak3sd.pdf

Silicon FS Trench IGBT CRG40T120AK3SD General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturati
crg40t120ak3s.pdf

CRG40T120AK3S CRG40T120AK3S VCES 1200 V RoHS IC 40 A Ptot TC=25 278 W VCE(sat) 1.9 V ; TO-247
crg40t120ak3s.pdf

Silicon FS Trench IGBT CRG40T120AK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 333 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio
Datasheet: MSG30T65FC , MSG40T65FL , MSG50T120FQW , MSG75T120FQC1 , MSG75T120FQW , MSG75T65FQC , CRG25T120BK3S , CRG40T120AK3S , FGA25N120ANTD , CRG40T60AN3H , CRG40T60AN3HD , CRG40T60AK3HD , CRG40T65AK5H , CRG40T65AN5H , CRG40T65AK5HD , CRG40T65AN5HD , CRG60T60AK3HD .
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