SPT10N120T1 Todos los transistores

 

SPT10N120T1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPT10N120T1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.8 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 15 nS
   Coesⓘ - Capacitancia de salida, typ: 50 pF
   Qgⓘ - Carga total de la puerta, typ: 84 nC
   Paquete / Cubierta: TO247
 

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SPT10N120T1 Datasheet (PDF)

 ..1. Size:1546K  cn sptech
 spt10n120t1.pdf pdf_icon

SPT10N120T1

SPT10N120T11200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 0.1. Size:5219K  cn sps
 spt10n120t1t8tl.pdf pdf_icon

SPT10N120T1

SPT10N120T1T8TL1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FGD3040G2-F085C | BG200B12UY3-I | IXGK80N60AU1 | SPT25N120U1 | SKM100GB12V | BLG15T65FUL-P | SPT40N120F1AT8TL

 

 
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