All IGBT. SPT10N120T1 Datasheet

 

SPT10N120T1 Datasheet and Replacement


   Type Designator: SPT10N120T1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qg ⓘ - Total Gate Charge, typ: 84 nC
   Package: TO247
 

 SPT10N120T1 substitution

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SPT10N120T1 Datasheet (PDF)

 ..1. Size:1546K  cn sptech
 spt10n120t1.pdf pdf_icon

SPT10N120T1

SPT10N120T11200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 0.1. Size:5219K  cn sps
 spt10n120t1t8tl.pdf pdf_icon

SPT10N120T1

SPT10N120T1T8TL1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - SPT10N120T1 transistor datasheet

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