SPT10N120T1 IGBT. Datasheet pdf. Equivalent
Type Designator: SPT10N120T1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 50 pF
Qgⓘ - Total Gate Charge, typ: 84 nC
Package: TO247
SPT10N120T1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SPT10N120T1 Datasheet (PDF)
spt10n120t1.pdf
SPT10N120T11200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable
spt10n120t1t8tl.pdf
SPT10N120T1T8TL1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 10 A Cimproved reliabilityV I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable
Datasheet: CRG40T65AN5HD , CRG60T60AK3HD , CRG75T60AK3HD , CRG75T65AK5HD , CRGMF100T120FSA3 , CRGMF50T120FSC , CRGMF75T120FSC , SPD15N65T1 , YGW40N65F1 , SPT15N120F1 , SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A .
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