All IGBT. CRG75T65AK5HD Datasheet

 

CRG75T65AK5HD Datasheet and Replacement


   Type Designator: CRG75T65AK5HD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G75T65AK5HD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 468 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 90 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 103 nS
   Coesⓘ - Output Capacitance, typ: 278 pF
   Qgⓘ - Total Gate Charge, typ: 173 nC
   Package: TO247
      - IGBT Cross-Reference

 

CRG75T65AK5HD Datasheet (PDF)

 ..1. Size:1143K  crhj
 crg75t65ak5hd.pdf pdf_icon

CRG75T65AK5HD

CRG75T65AK5HD CRG75T65AK5HD FS IGBT VCES 650 V IC 75 A RoHS Ptot TC=25 468 W VCE(sat) 1.65 V TO-247 FS VCE(s

 7.1. Size:963K  crhj
 crg75t60ak3hd.pdf pdf_icon

CRG75T65AK5HD

CRG75T60AK3HD CRG75T60AK3HD FS IGBT VCES 600 V RoHS IC 75 A Ptot TC=25 390 W VCE(sat) 1.70 V FS TO-247 VCE(sat),TYP

 7.2. Size:1230K  wuxi china
 crg75t60ak3hd.pdf pdf_icon

CRG75T65AK5HD

Silicon FS Trench IGBT CRG75T60AK3HD General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 75 A Stop (FS) technology, offering superior conduction and switching 469 W Ptot TC=25VCE(sat) 1.70 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturat

Datasheet: CRG40T60AN3HD , CRG40T60AK3HD , CRG40T65AK5H , CRG40T65AN5H , CRG40T65AK5HD , CRG40T65AN5HD , CRG60T60AK3HD , CRG75T60AK3HD , FGA60N65SMD , CRGMF100T120FSA3 , CRGMF50T120FSC , CRGMF75T120FSC , SPD15N65T1 , SPT10N120T1 , SPT15N120F1 , SPT15N120T1 , SPT15N65T1 .

History: PPNHZ52F120A

Keywords - CRG75T65AK5HD transistor datasheet

 CRG75T65AK5HD cross reference
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 CRG75T65AK5HD substitution
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