All IGBT. SPD15N65T1 Datasheet

 

SPD15N65T1 IGBT. Datasheet pdf. Equivalent


   Type Designator: SPD15N65T1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 27 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 80 pF
   Qgⓘ - Total Gate Charge, typ: 92 nC
   Package: TO263

 SPD15N65T1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPD15N65T1 Datasheet (PDF)

 ..1. Size:1908K  cn sptech
 spd15n65t1.pdf

SPD15N65T1 SPD15N65T1

SPD15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application

 0.1. Size:6260K  cn sps
 spd15n65t1t0tl.pdf

SPD15N65T1 SPD15N65T1

SPD15N65T1T0TL650V /15A Trench Field Stop IGBT V 650 V CEFeatures I 15 A C Max Junction Temperature 150C High breakdown voltage up to 650V forV I =15A 1.65 V CE(SAT) Cimproved reliability Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching appli

 9.1. Size:639K  1
 spd15p10pg spp15p10pg.pdf

SPD15N65T1 SPD15N65T1

SPP15P10P GSPD15P10P GSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.24DS(on),max Enhancement modeI -15 AD Normal level Avalanche ratedPG-TO220-3 PG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPP15P10P G PG-TO220-3 15P10P Yes Non drySPD15P10P G PG-TO252-3 15P10P Yes N

 9.2. Size:692K  infineon
 spd15p10plg.pdf

SPD15N65T1 SPD15N65T1

SPD15P10PL GSIPMOS Power-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 0.20DS(on),max Enhancement modeI -15 AD logic level Avalanche ratedPG-TO252-3 Pb-free lead plating; RoHS compliantType Package Marking Lead free PackingSPD15P10PL G PG-TO252-3 15P10PL Yes Non dryMaximum ratings, at T =25 C, unless otherwise specifiedjPa

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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