All IGBT. SPT15N65T1 Datasheet

 

SPT15N65T1 IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT15N65T1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 35
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 25
   Collector Capacity (Cc), typ, pF: 80
   Total Gate Charge (Qg), typ, nC: 92
   Package: TO220C

 SPT15N65T1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT15N65T1 Datasheet (PDF)

 ..1. Size:1274K  cn sptech
 spt15n65t1.pdf

SPT15N65T1 SPT15N65T1

SPT15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application

 8.1. Size:3565K  cn sps
 spt15n120f1t8tl.pdf

SPT15N65T1 SPT15N65T1

SPT15N120F1T8TL1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggednes

 8.2. Size:9545K  cn sps
 spt15n120t1t8tl.pdf

SPT15N65T1 SPT15N65T1

SPT15N120T1T8TL1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature s

 8.3. Size:1266K  cn sptech
 spt15n120f1.pdf

SPT15N65T1 SPT15N65T1

SPT15N120F11200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggedness, t

 8.4. Size:1120K  cn sptech
 spt15n120t1.pdf

SPT15N65T1 SPT15N65T1

SPT15N120T1 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature stab

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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