Справочник IGBT. SPT15N65T1

 

SPT15N65T1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SPT15N65T1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 25 nS
   Coesⓘ - Выходная емкость, типовая: 80 pF
   Qgⓘ - Общий заряд затвора, typ: 92 nC
   Тип корпуса: TO220C

 Аналог (замена) для SPT15N65T1

 

 

SPT15N65T1 Datasheet (PDF)

 ..1. Size:1274K  cn sptech
 spt15n65t1.pdf

SPT15N65T1 SPT15N65T1

SPT15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application

 8.1. Size:3565K  cn sps
 spt15n120f1t8tl.pdf

SPT15N65T1 SPT15N65T1

SPT15N120F1T8TL1200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggednes

 8.2. Size:9545K  cn sps
 spt15n120t1t8tl.pdf

SPT15N65T1 SPT15N65T1

SPT15N120T1T8TL1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature s

 8.3. Size:1266K  cn sptech
 spt15n120f1.pdf

SPT15N65T1 SPT15N65T1

SPT15N120F11200V /15A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1200 V CEswitching losses, high energy efficiency and I 15 A Chigh avalanche ruggedness for soft switching applications such as inductive heating, V I =15A 1.9 V CE(SAT) Cmicrowave oven, etc. FEATURES Trench-Stop Technology offering : High speed switching High ruggedness, t

 8.4. Size:1120K  cn sptech
 spt15n120t1.pdf

SPT15N65T1 SPT15N65T1

SPT15N120T1 1200V /15A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 15 A Cimproved reliability V I =15A 1.7 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature stab

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