SPT25N120F1A1
IGBT. Datasheet pdf. Equivalent
Type Designator: SPT25N120F1A1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200
V
|Ic|ⓘ - Maximum Collector Current: 50
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 32
nS
Coesⓘ - Output Capacitance, typ: 70
pF
Qgⓘ -
Total Gate Charge, typ: 125
nC
Package:
TO247
SPT25N120F1A1
Transistor Equivalent Substitute - IGBT Cross-Reference Search
SPT25N120F1A1
Datasheet (PDF)
..1. Size:1545K cn sptech
spt25n120f1a1.pdf 
SPT25N120F1A11200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat Enhanc
0.1. Size:4778K cn sps
spt25n120f1a1t8tl.pdf
SPT25N120F1A1T8TL1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat En
3.1. Size:5495K cn sps
spt25n120f1.pdf
SPT25N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable
5.1. Size:5254K cn sps
spt25n120u1t8tl.pdf
SPT25N120U1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet
5.2. Size:5580K cn sps
spt25n120t1t8tl.pdf
SPT25N120T1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel sw
5.3. Size:1562K cn sptech
spt25n120u1.pdf
SPT25N120U11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po
5.4. Size:1896K cn sptech
spt25n120t1.pdf
SPT25N120T11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel switch
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