Справочник IGBT. SPT25N120F1A1

 

SPT25N120F1A1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SPT25N120F1A1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 32 nS
   Coesⓘ - Выходная емкость, типовая: 70 pF
   Qgⓘ - Общий заряд затвора, typ: 125 nC
   Тип корпуса: TO247

 Аналог (замена) для SPT25N120F1A1

 

 

SPT25N120F1A1 Datasheet (PDF)

 ..1. Size:1545K  cn sptech
 spt25n120f1a1.pdf

SPT25N120F1A1 SPT25N120F1A1

SPT25N120F1A11200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat Enhanc

 0.1. Size:4778K  cn sps
 spt25n120f1a1t8tl.pdf

SPT25N120F1A1 SPT25N120F1A1

SPT25N120F1A1T8TL1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V forV 1200 V CEimproved reliabilityI 25 A C Trench-Stop Technology offering : High speed switchingV I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low VCEsat Easy parallel switching capability dueto positive temperature coefficient inVCEsat En

 3.1. Size:5495K  cn sps
 spt25n120f1.pdf

SPT25N120F1A1 SPT25N120F1A1

SPT25N120F11200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 20 A Cimproved reliabilityV I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 5.1. Size:5254K  cn sps
 spt25n120u1t8tl.pdf

SPT25N120F1A1 SPT25N120F1A1

SPT25N120U1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 5.2. Size:5580K  cn sps
 spt25n120t1t8tl.pdf

SPT25N120F1A1 SPT25N120F1A1

SPT25N120T1T8TL1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel sw

 5.3. Size:1562K  cn sptech
 spt25n120u1.pdf

SPT25N120F1A1 SPT25N120F1A1

SPT25N120U11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

 5.4. Size:1896K  cn sptech
 spt25n120t1.pdf

SPT25N120F1A1 SPT25N120F1A1

SPT25N120T11200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 25 A Cimproved reliabilityV I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering : Very tight parameter distribution High ruggedness, temperature stablebehavior Short circuit withstand time 10s Low VCE(SAT) Easy parallel switch

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