All IGBT. SPL40N120 Datasheet

 

SPL40N120 IGBT. Datasheet pdf. Equivalent


   Type Designator: SPL40N120
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 500
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 64
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.2(typ)
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 65
   Collector Capacity (Cc), typ, pF: 295
   Total Gate Charge (Qg), typ, nC: 225
   Package: TO264

 SPL40N120 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPL40N120 Datasheet (PDF)

 ..1. Size:1640K  cn sptech
spt40n120 spl40n120.pdf

SPL40N120
SPL40N120

SPTECH Product SpecificationSPT40N120 SPL40N121200V 40A High Speed IGBTFEATURES 1200V Trench & Field Stop technology Low saturation voltage High switching frequency Very soft , fast recovery anti-parallel diodeGGCAPPLICATIONS CETO-247 E TO-264 Welding converters Uninterruptible Power SupplyC General purpose invertersOrdering Information

 9.1. Size:651K  silikron
sspl4004.pdf

SPL40N120
SPL40N120

SSPL4004 Main Product Characteristics: VDSS 40V RDS(on) 3.9mohm(typ.) ID 180A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Datasheet: SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , FGPF4633 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL .

 

 
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