All IGBT. SPL40N120 Datasheet

 

SPL40N120 Datasheet and Replacement


   Type Designator: SPL40N120
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 64 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 295 pF
   Package: TO264
 

 SPL40N120 substitution

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SPL40N120 Datasheet (PDF)

 ..1. Size:1640K  cn sptech
 spt40n120 spl40n120.pdf pdf_icon

SPL40N120

SPTECH Product SpecificationSPT40N120 SPL40N121200V 40A High Speed IGBTFEATURES 1200V Trench & Field Stop technology Low saturation voltage High switching frequency Very soft , fast recovery anti-parallel diodeGGCAPPLICATIONS CETO-247 E TO-264 Welding converters Uninterruptible Power SupplyC General purpose invertersOrdering Information

 9.1. Size:651K  silikron
 sspl4004.pdf pdf_icon

SPL40N120

SSPL4004 Main Product Characteristics: VDSS 40V RDS(on) 3.9mohm(typ.) ID 180A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Datasheet: SPT15N120T1 , SPT15N65T1 , SPT20N120F1 , SPT25N120F1A1 , SPT25N120T1 , SPT25N120U1 , SPT25N135F1A , SPT40N120 , SGT60N60FD1P7 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SPT60N65F1A1 , SPD15N65T1T0TL .

Keywords - SPL40N120 transistor datasheet

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