SPT60N65F1A1 Datasheet and Replacement
Type Designator: SPT60N65F1A1
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 79 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO247
SPT60N65F1A1 substitution
SPT60N65F1A1 Datasheet (PDF)
spt60n65f1a1.pdf

SPT60N65F1A1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :
spt60n65f1a1t8tl.pdf

SPT60N65F1A1T8TL650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering
Datasheet: SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , TGAN60N60F2DS , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL .
History: IXXH30N60B3 | IGC07R60D | AFGY120T65SPD-B4
Keywords - SPT60N65F1A1 transistor datasheet
SPT60N65F1A1 cross reference
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SPT60N65F1A1 replacement
History: IXXH30N60B3 | IGC07R60D | AFGY120T65SPD-B4



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