All IGBT. SPT60N65F1A1 Datasheet

 

SPT60N65F1A1 Datasheet and Replacement


   Type Designator: SPT60N65F1A1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 120 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 79 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qg ⓘ - Total Gate Charge, typ: 158 nC
   Package: TO247
 

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SPT60N65F1A1 Datasheet (PDF)

 ..1. Size:1785K  cn sptech
 spt60n65f1a1.pdf pdf_icon

SPT60N65F1A1

SPT60N65F1A1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 0.1. Size:5471K  cn sps
 spt60n65f1a1t8tl.pdf pdf_icon

SPT60N65F1A1

SPT60N65F1A1T8TL650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: NGTB15N120L | CM150TL-12NF | STGWA20HP65FB2 | IXSA15N120B | IXGM25N100A | BSM200GB60DLC | BSM300GAR120DLC

Keywords - SPT60N65F1A1 transistor datasheet

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