All IGBT. SPT60N65F1A1 Datasheet

 

SPT60N65F1A1 IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT60N65F1A1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 260
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 120
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 79
   Collector Capacity (Cc), typ, pF: 130
   Total Gate Charge (Qg), typ, nC: 158
   Package: TO247

 SPT60N65F1A1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT60N65F1A1 Datasheet (PDF)

 ..1. Size:1785K  cn sptech
 spt60n65f1a1.pdf

SPT60N65F1A1 SPT60N65F1A1

SPT60N65F1A1 650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering :

 0.1. Size:5471K  cn sps
 spt60n65f1a1t8tl.pdf

SPT60N65F1A1 SPT60N65F1A1

SPT60N65F1A1T8TL650V /60A Trench Field Stop IGBT 650V Trench Field Stop IGBTs offer low V 650 V CEswitching losses, high energy efficiency and I 60 A Chigh avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V forimproved reliability Trench-Stop Technology offering

Datasheet: SPT40N120 , SPL40N120 , SPT40N120F1A , SPT40N120F1A1 , SPT40N120F1C , SPT40N120T1B1 , SPT50N65F1A , SPT50N65F1A1 , SGT15T60QD1F , SPD15N65T1T0TL , SPF15N65T1T1TL , SPF15N65T1T2TL , SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL .

 

 
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