All IGBT. SPT40N120F1A1T8TL Datasheet

 

SPT40N120F1A1T8TL Datasheet and Replacement


   Type Designator: SPT40N120F1A1T8TL
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Package: TO247
      - IGBT Cross-Reference

 

SPT40N120F1A1T8TL Datasheet (PDF)

 0.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 1.1. Size:1987K  cn sptech
 spt40n120f1a1.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

 2.1. Size:5557K  cn sps
 spt40n120f1at8tl.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 2.2. Size:1873K  cn sptech
 spt40n120f1a.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG75J120U6HN | 2SH29

Keywords - SPT40N120F1A1T8TL transistor datasheet

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 SPT40N120F1A1T8TL equivalent finder
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 SPT40N120F1A1T8TL substitution
 SPT40N120F1A1T8TL replacement

 

 
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