All IGBT. SPT40N120F1A1T8TL Datasheet

 

SPT40N120F1A1T8TL Datasheet and Replacement


   Type Designator: SPT40N120F1A1T8TL
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Package: TO247
 

 SPT40N120F1A1T8TL substitution

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SPT40N120F1A1T8TL Datasheet (PDF)

 0.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 1.1. Size:1987K  cn sptech
 spt40n120f1a1.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

 2.1. Size:5557K  cn sps
 spt40n120f1at8tl.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 2.2. Size:1873K  cn sptech
 spt40n120f1a.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

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Datasheet: SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , CRG75T60AK3HD , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T .

History: SKM50GB063D

Keywords - SPT40N120F1A1T8TL transistor datasheet

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