SPT40N120F1A1T8TL PDF and Equivalents Search

 

SPT40N120F1A1T8TL Specs and Replacement

Type Designator: SPT40N120F1A1T8TL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 180 pF

Package: TO247

 SPT40N120F1A1T8TL Substitution

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SPT40N120F1A1T8TL datasheet

 0.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A1T8TL 1200V / 40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due... See More ⇒

 1.1. Size:1987K  cn sptech
 spt40n120f1a1.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A1 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to p... See More ⇒

 2.1. Size:5557K  cn sps
 spt40n120f1at8tl.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1AT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t... See More ⇒

 2.2. Size:1873K  cn sptech
 spt40n120f1a.pdf pdf_icon

SPT40N120F1A1T8TL

SPT40N120F1A 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to po... See More ⇒

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Specs: SPT10N120T1T8TL , SPT15N120F1T8TL , SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , GT30F133 , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T .

History: RJH60D2DPP-M0 | SRE50N120FSUDATP

Keywords - SPT40N120F1A1T8TL transistor spec

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