SPT40N120F1A1T8TL - аналоги, параметры транзистора

SPT40N120F1A1T8TL даташит

0.1. Size:5763K cn sps
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SPT40N120F1A1T8TL 1200V / 40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due

1.1. Size:1987K cn sptech
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SPT40N120F1A1 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to p

2.1. Size:5557K cn sps
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SPT40N120F1AT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t

2.2. Size:1873K cn sptech
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SPT40N120F1A 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to po

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