All IGBT. SPT40N120F1CT8TL Datasheet

 

SPT40N120F1CT8TL IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT40N120F1CT8TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 416
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.4
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 20
   Collector Capacity (Cc), typ, pF: 180
   Total Gate Charge (Qg), typ, nC: 270
   Package: TO247

 SPT40N120F1CT8TL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT40N120F1CT8TL Datasheet (PDF)

 0.1. Size:7063K  cn sps
 spt40n120f1ct8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1CT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 2.1. Size:1659K  cn sptech
 spt40n120f1c.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPTECH Product SpecificationSPT40N120F1CFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto positive

 3.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 3.2. Size:5557K  cn sps
 spt40n120f1at8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 3.3. Size:1987K  cn sptech
 spt40n120f1a1.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

 3.4. Size:1873K  cn sptech
 spt40n120f1a.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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