All IGBT. SPT40N120F1CT8TL Datasheet

 

SPT40N120F1CT8TL IGBT. Datasheet pdf. Equivalent


   Type Designator: SPT40N120F1CT8TL
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Qgⓘ - Total Gate Charge, typ: 270 nC
   Package: TO247

 SPT40N120F1CT8TL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SPT40N120F1CT8TL Datasheet (PDF)

 0.1. Size:7063K  cn sps
spt40n120f1ct8tl.pdf

SPT40N120F1CT8TL
SPT40N120F1CT8TL

SPT40N120F1CT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 2.1. Size:1659K  cn sptech
spt40n120f1c.pdf

SPT40N120F1CT8TL
SPT40N120F1CT8TL

SPTECH Product SpecificationSPT40N120F1CFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto positive

 3.1. Size:5763K  cn sps
spt40n120f1a1t8tl.pdf

SPT40N120F1CT8TL
SPT40N120F1CT8TL

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 3.2. Size:5557K  cn sps
spt40n120f1at8tl.pdf

SPT40N120F1CT8TL
SPT40N120F1CT8TL

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 3.3. Size:1987K  cn sptech
spt40n120f1a1.pdf

SPT40N120F1CT8TL
SPT40N120F1CT8TL

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

 3.4. Size:1873K  cn sptech
spt40n120f1a.pdf

SPT40N120F1CT8TL
SPT40N120F1CT8TL

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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