SPT40N120F1CT8TL PDF and Equivalents Search

 

SPT40N120F1CT8TL Specs and Replacement

Type Designator: SPT40N120F1CT8TL

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 416 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 180 pF

Package: TO247

 SPT40N120F1CT8TL Substitution

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SPT40N120F1CT8TL datasheet

 0.1. Size:7063K  cn sps
 spt40n120f1ct8tl.pdf pdf_icon

SPT40N120F1CT8TL

SPT40N120F1CT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable ... See More ⇒

 2.1. Size:1659K  cn sptech
 spt40n120f1c.pdf pdf_icon

SPT40N120F1CT8TL

SPTECH Product Specification SPT40N120F1C FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to positive... See More ⇒

 3.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf pdf_icon

SPT40N120F1CT8TL

SPT40N120F1A1T8TL 1200V / 40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due... See More ⇒

 3.2. Size:5557K  cn sps
 spt40n120f1at8tl.pdf pdf_icon

SPT40N120F1CT8TL

SPT40N120F1AT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t... See More ⇒

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Specs: SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , TGAN20N135FD , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , XNS25N120T .

History: SPM1004 | TGAN40S160FD | STGB19NC60HD | SII50N06 | SII300N06 | SGM35PA12A6BTFD | YGW50N120FP

Keywords - SPT40N120F1CT8TL transistor spec

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