Справочник IGBT. SPT40N120F1CT8TL

 

SPT40N120F1CT8TL - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SPT40N120F1CT8TL
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 416 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.5 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.4 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 20 nS
   Coesⓘ - Выходная емкость, типовая: 180 pF
   Qgⓘ - Общий заряд затвора, typ: 270 nC
   Тип корпуса: TO247

 Аналог (замена) для SPT40N120F1CT8TL

 

 

SPT40N120F1CT8TL Datasheet (PDF)

 0.1. Size:7063K  cn sps
 spt40n120f1ct8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1CT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 2.1. Size:1659K  cn sptech
 spt40n120f1c.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPTECH Product SpecificationSPT40N120F1CFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto positive

 3.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 3.2. Size:5557K  cn sps
 spt40n120f1at8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 3.3. Size:1987K  cn sptech
 spt40n120f1a1.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

 3.4. Size:1873K  cn sptech
 spt40n120f1a.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

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