Справочник IGBT. SPT40N120F1CT8TL

 

SPT40N120F1CT8TL - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: SPT40N120F1CT8TL
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 416
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.4
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 20
   Емкость коллектора типовая (Cc), pf: 180
   Общий заряд затвора (Qg), typ, nC: 270
   Тип корпуса: TO247

 Аналог (замена) для SPT40N120F1CT8TL

 

 

SPT40N120F1CT8TL Datasheet (PDF)

 0.1. Size:7063K  cn sps
 spt40n120f1ct8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1CT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 1.5 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stablebehavior Short circuit withstand time 10s High ruggedness, temperature stable

 2.1. Size:1659K  cn sptech
 spt40n120f1c.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPTECH Product SpecificationSPT40N120F1CFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto positive

 3.1. Size:5763K  cn sps
 spt40n120f1a1t8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A1T8TL1200V / 40A Trench Field Stop IGBTFEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability due

 3.2. Size:5557K  cn sps
 spt40n120f1at8tl.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1AT8TL1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability duet

 3.3. Size:1987K  cn sptech
 spt40n120f1a1.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A11200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto p

 3.4. Size:1873K  cn sptech
 spt40n120f1a.pdf

SPT40N120F1CT8TL SPT40N120F1CT8TL

SPT40N120F1A1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V forI 40 A Cimproved reliabilityV I =40A 2.0 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Short circuit withstand time 10s Low VCEsat Easy parallel switching capability dueto po

Другие IGBT... SPT15N120T1T8TL , SPT25N120F1 , SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , GT30J122 , SPT40N120T1B1T8TL , SPT40N120T1BT8TL , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , XNS25N120T .

History: SGT40T120SDB4P7

 

 
Back to Top