SPT40N120T1BT8TL Specs and Replacement
Type Designator: SPT40N120T1BT8TL
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 180 pF
Package: TO247
SPT40N120T1BT8TL Substitution - IGBT ⓘ Cross-Reference Search
SPT40N120T1BT8TL datasheet
spt40n120t1bt8tl.pdf
SPT40N120T1BT8TL 1200V /40A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable ... See More ⇒
spt40n120t1b1t8tl.pdf
SPT40N120T1B1T8TL 1200V /40A TrenchField Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 40 A C improved reliability V I =40A 1.7 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable ... See More ⇒
Specs: SPT25N120F1A1T8TL , SPT25N120T1T8TL , SPT25N120U1T8TL , SPT25N135F1AT8TL , SPT40N120F1A1T8TL , SPT40N120F1AT8TL , SPT40N120F1CT8TL , SPT40N120T1B1T8TL , IRG4PC50W , SPT50N65F1A1T8TL , SPT50N65F1AT8TL , SPT60N65F1A1T8TL , XNF6N60T , XNG100B24TC1S5 , XNS25N120T , XNS40N120T , XD015H060CX1S3 .
History: XD040Q120AT1S3 | TGAN40S160FD | STGWA15M120DF3 | SII50N06 | SII300N06
Keywords - SPT40N120T1BT8TL transistor spec
SPT40N120T1BT8TL cross reference
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History: XD040Q120AT1S3 | TGAN40S160FD | STGWA15M120DF3 | SII50N06 | SII300N06
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