SGT15T60QD1F Specs and Replacement
Type Designator: SGT15T60QD1F
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 33 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 38 nS
Coesⓘ - Output Capacitance, typ: 42 pF
Package: TO220F
SGT15T60QD1F Substitution
SGT15T60QD1F datasheet
sgt15t60sd1t sgt15t60sd1f sgt15t60sd1str.pdf
SGT15T60SD1T/F/S 15A 600V C 2 SGT15T60SD1T/F/S 1 Field Stop III G UPS,SMPS PFC 1 3 3 TO-263-2L E 15A 600V VCE ... See More ⇒
sgt15u65sd1f sgt15u65sd1fd.pdf
SGT15U65SD1F(FD) 15A 650V C 2 SGT15U65SD1F(FD) 4 1 G Plus Field Stop IV+ UPS SMPS PFC 3 E 15A 650V VCE(sat)( )=1.6V@IC... See More ⇒
Specs: SGM40HF12A1TFD , SGM50HF12A1TFD , SGM50HF12A1TFDT4 , SGM50PA12A6BTFD , SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD , FGD4536 , SGT20T60SDM1P7 , SGT25T120FD1P7 , SGT25U120FD1P7 , SGT40N60FD2PN , SGT40N60FD2P7 , SGT40N60NPFDPN , SGT50T65FD1PN , SGT50T65FD1P7 .
Keywords - SGT15T60QD1F transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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