SGT25U120FD1P7 Datasheet. Specs and Replacement
Type Designator: SGT25U120FD1P7 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 278 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 85 pF
Package: TO247
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SGT25U120FD1P7 datasheet
sgt25u120fd1p7.pdf
SGT25U120FD1P7 25A 1200V C 2 SGT25U120FD1P7 4 1 Plus Field Stop IV+ G UPS SMPS PFC 3 E 25A 1200V VCE(sat)( )=2.2V@IC=25A ... See More ⇒
sgt25t120fd1p7.pdf
SGT25T120FD1P7 25A 1200V SGT25T120FD1P7 Trench Field Stop UPS SMPS PFC 25A 1200V VCE(sat)( )=2.25V@... See More ⇒
Specs: SGM50PA12A6BTFD, SGM75HF12A1TFD, SGM75HF12A1TFD1, SGM75HF12A1TFDT4, SGM75HF12A1TLD, SGT15T60QD1F, SGT20T60SDM1P7, SGT25T120FD1P7, GT50JR22, SGT40N60FD2PN, SGT40N60FD2P7, SGT40N60NPFDPN, SGT50T65FD1PN, SGT50T65FD1P7, SGT50T65FD1PS, SGT50T65FD1PT, SGTP5T60SD1D
Keywords - SGT25U120FD1P7 transistor spec
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History: BSM75GB60DLC
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