SGT40N60FD2PN IGBT. Datasheet pdf. Equivalent
Type Designator: SGT40N60FD2PN
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 380 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 88 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Package: TO3P
SGT40N60FD2PN Transistor Equivalent Substitute - IGBT Cross-Reference Search
SGT40N60FD2PN Datasheet (PDF)
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SGT40N60FD2PN(P7) 40A, 600V SGT40N60FD2PN(P7) Field Stop III UPSSMPS PFC 40A, 600V, VCE(sat) =1.
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Datasheet: SGM75HF12A1TFD , SGM75HF12A1TFD1 , SGM75HF12A1TFDT4 , SGM75HF12A1TLD , SGT15T60QD1F , SGT20T60SDM1P7 , SGT25T120FD1P7 , SGT25U120FD1P7 , RJP63F3DPP-M0 , SGT40N60FD2P7 , SGT40N60NPFDPN , SGT50T65FD1PN , SGT50T65FD1P7 , SGT50T65FD1PS , SGT50T65FD1PT , SGTP5T60SD1D , SGTP5T60SD1F .
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