SGT50T65FD1PN Datasheet. Specs and Replacement

The SGT50T65FD1PN is a 650V, 100A IGBT designed for high-efficiency power switching applications. It integrates a fast, soft-recovery antiparallel diode, making it suitable for inverter and motor drive systems. The SGT50T65FD1PN demonstrates high short-circuit capability, stable operation at elevated temperatures, low Vce(sat). Typical applications include industrial motor drives, UPS systems, welding equipment, power factor correction circuits, where reliability and efficiency are critical.

Type Designator: SGT50T65FD1PN  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 235 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 145 nS

Coesⓘ - Output Capacitance, typ: 90 pF

Package: TO3P

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SGT50T65FD1PN datasheet

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SGT50T65FD1PN

SGT50T65FD1PN/P7 50A 650V C 2 SGT50T65FD1PN/P7 1 Field Stop IV G UPS,SMPS PFC 3 E 50A 650V VCE(sat)( )=2.0... See More ⇒

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SGT50T65FD1PN

SGT50T65SDM1P7 50A 650V C 2 SGT50T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 50A 650V VCE(sat)( )=1.65V@IC=50A ... See More ⇒

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Specs: SGM75HF12A1TLD, SGT15T60QD1F, SGT20T60SDM1P7, SGT25T120FD1P7, SGT25U120FD1P7, SGT40N60FD2PN, SGT40N60FD2P7, SGT40N60NPFDPN, CRG40T60AN3H, SGT50T65FD1P7, SGT50T65FD1PS, SGT50T65FD1PT, SGTP5T60SD1D, SGTP5T60SD1F, SGTP5T60SD1S, AU40N120T3A2, LGM100HF120S2F1A

Keywords - SGT50T65FD1PN transistor spec

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