YGF15N65T2 Datasheet. Specs and Replacement

Type Designator: YGF15N65T2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 30.6 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 20 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO220F

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YGF15N65T2 datasheet

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YGF15N65T2

YGF15N65T2 YGK15N65T2 YGP15N65T2 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 175 C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.50 V CE(SAT) C Very Low Saturation Voltage V = 1.50V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications ... See More ⇒

Specs: SGT50T65FD1PS, SGT50T65FD1PT, SGTP5T60SD1D, SGTP5T60SD1F, SGTP5T60SD1S, AU40N120T3A2, LGM100HF120S2F1A, LGM400HF65S4T1A, RJP30H1DPD, YGK15N65T2, YGP15N65T2, YGF20N65T2, YGK20N65T2, YGP20N65T2, YGW20N65T2, YGQ100N65FP, YGW10N120T3

Keywords - YGF15N65T2 transistor spec

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