All IGBT. YGK15N65T2 Datasheet

 

YGK15N65T2 Datasheet and Replacement


   Type Designator: YGK15N65T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qg ⓘ - Total Gate Charge, typ: 45 nC
   Package: TO263
 

 YGK15N65T2 substitution

   - IGBT ⓘ Cross-Reference Search

 

YGK15N65T2 Datasheet (PDF)

 ..1. Size:522K  cn luxin semi
 ygf15n65t2 ygk15n65t2 ygp15n65t2.pdf pdf_icon

YGK15N65T2

YGF15N65T2 YGK15N65T2 YGP15N65T2 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.50 V CE(SAT) C Very Low Saturation Voltage: V = 1.50V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - YGK15N65T2 transistor datasheet

 YGK15N65T2 cross reference
 YGK15N65T2 equivalent finder
 YGK15N65T2 lookup
 YGK15N65T2 substitution
 YGK15N65T2 replacement

 

 
Back to Top

 


 
.