All IGBT. YGW20N65T2 Datasheet

 

YGW20N65T2 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW20N65T2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 50 pF
   Qgⓘ - Total Gate Charge, typ: 45 nC
   Package: TO247

 YGW20N65T2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW20N65T2 Datasheet (PDF)

 ..1. Size:601K  cn luxin semi
 ygf20n65t2 ygk20n65t2 ygp20n65t2 ygw20n65t2.pdf

YGW20N65T2 YGW20N65T2

YGF20N65T2,YGK20N65T2YGP20N65T2,YGW20N65T2 650V /20A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 20 A C Short Circuit Rated V I =20A 1.65 V CE(SAT) C Very Low Saturation Voltage: V = 1.65V (Typ.) @ I = 20A CE(SAT) C Soft current turn-off waveforms App

Datasheet: LGM100HF120S2F1A , LGM400HF65S4T1A , YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , FGA60N65SMD , YGQ100N65FP , YGW10N120T3 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A .

 

 
Back to Top