All IGBT. YGW10N120T3 Datasheet

 

YGW10N120T3 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW10N120T3
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 260
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 45
   Total Gate Charge (Qg), typ, nC: 75
   Package: TO247

 YGW10N120T3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW10N120T3 Datasheet (PDF)

 ..1. Size:444K  cn luxin semi
 ygw10n120t3.pdf

YGW10N120T3 YGW10N120T3

YGW10N120T3 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A Cimproved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature sta

Datasheet: YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , IHW40T60 , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 .

 

 
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