YGW10N120T3 Datasheet. Specs and Replacement

Type Designator: YGW10N120T3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 45 pF

Package: TO247

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YGW10N120T3 datasheet

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YGW10N120T3

YGW10N120T3 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A C improved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature sta... See More ⇒

Specs: YGF15N65T2, YGK15N65T2, YGP15N65T2, YGF20N65T2, YGK20N65T2, YGP20N65T2, YGW20N65T2, YGQ100N65FP, IRG7R313U, YGW15N120F1A, YGW15N120T3, YGW25N120F1A1, YGW25N120T1, YGW25N120U2, YGW25N135F1A, YGW40N120F2, YGW40N120T2

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