YGW10N120T3 Datasheet and Replacement
Type Designator: YGW10N120T3
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 260 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Package: TO247
YGW10N120T3 substitution
YGW10N120T3 Datasheet (PDF)
ygw10n120t3.pdf

YGW10N120T3 1200V /10A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 10 A Cimproved reliability V I =10A 1.60 V CE(SAT) C Trench-Stop Technology offering : very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10s High ruggedness, temperature sta
Datasheet: YGF15N65T2 , YGK15N65T2 , YGP15N65T2 , YGF20N65T2 , YGK20N65T2 , YGP20N65T2 , YGW20N65T2 , YGQ100N65FP , FGH60N60SFD , YGW15N120F1A , YGW15N120T3 , YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 .
History: FGA15N120ANTDTU-F109
Keywords - YGW10N120T3 transistor datasheet
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History: FGA15N120ANTDTU-F109



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