All IGBT. YGW40N65F1A2 Datasheet

 

YGW40N65F1A2 IGBT. Datasheet pdf. Equivalent


   Type Designator: YGW40N65F1A2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 188
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 80
   Collector Capacity (Cc), typ, pF: 100
   Total Gate Charge (Qg), typ, nC: 90
   Package: TO247

 YGW40N65F1A2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

YGW40N65F1A2 Datasheet (PDF)

 ..1. Size:412K  cn luxin semi
 ygw40n65f1a2.pdf

YGW40N65F1A2 YGW40N65F1A2

YGW40N65F1A2 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 3.1. Size:412K  cn luxin semi
 ygw40n65f1a1.pdf

YGW40N65F1A2 YGW40N65F1A2

YGW40N65F1A1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in

 4.1. Size:599K  1
 ygw40n65f1.pdf

YGW40N65F1A2 YGW40N65F1A2

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

 4.2. Size:412K  cn luxin semi
 ygw40n65f1.pdf

YGW40N65F1A2 YGW40N65F1A2

YGW40N65F1 650V /40A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 40 A Cimproved reliability V I =40A 1.80 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V

Datasheet: YGW25N120F1A1 , YGW25N120T1 , YGW25N120U2 , YGW25N135F1A , YGW40N120F2 , YGW40N120T2 , YGW40N120T3 , YGW40N65F1A1 , RJH60F5DPQ-A0 , YGW50N120FP , YGW50N65F1A , YGW50N65T1 , YGW60N65F1A2 , YGW60N65T1 , YGW75N65F1 , YGW75N65FP , YGW75N65HP .

 

 
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