YGW60N65T1 IGBT. Datasheet pdf. Equivalent
Type Designator: YGW60N65T1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 312
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 120
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 79
Collector Capacity (Cc), typ, pF: 130
Total Gate Charge (Qg), typ, nC: 158
Package: TO247
YGW60N65T1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
YGW60N65T1 Datasheet (PDF)
ygw60n65t1.pdf
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YGW60N65T1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V Trench-Stop Technology offering : CE(SAT) C High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V
ygw60n65f1a1.pdf
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YGW60N65F1A1 650V /60A Trench Field Stop IGBT Lu-Semi 650V Trench Field Stop IGBTs offer V 650 V CElow switching losses, high energy efficiency I 60 A Cand high avalanche ruggedness for motion control, solar application and welding machine. V I =60A 1.85 V CE(SAT) CFEATURES High breakdown voltage up to 650V for improved reliability Trench-Stop Technology of
ygw60n65f1a1.pdf
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YGW60N65F1A1 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in
ygw60n65f1a2.pdf
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YGW60N65F1A2 650V /60A Trench Field Stop IGBT FEATURES V 650 V CE High breakdown voltage up to 650V for I 60 A Cimproved reliability V I =60A 1.85 V CE(SAT) C Trench-Stop Technology offering : High speed switching High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![YGW60N65T1](https://alltransistors.com/images/us.png)
![YGW60N65T1](https://alltransistors.com/images/es.png)
![YGW60N65T1](https://alltransistors.com/images/ru.png)
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