All IGBT. IXGH10N100U1 Datasheet

 

IXGH10N100U1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGH10N100U1
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 100 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 500 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 52 nC
   Package: TO247

 IXGH10N100U1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGH10N100U1 Datasheet (PDF)

 ..1. Size:413K  ixys
 ixgh10n100au1 ixgh10n100u1.pdf

IXGH10N100U1 IXGH10N100U1

 4.1. Size:34K  ixys
 ixgh10n100a.pdf

IXGH10N100U1 IXGH10N100U1

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 VHigh speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C20 AG = Gate, C = Collector,IC90 TC = 90C10 AE = Emitter, TAB = Col

 4.2. Size:34K  ixys
 ixgh10n100.pdf

IXGH10N100U1 IXGH10N100U1

VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH 10 N100 1000 V 20 A 3.5 VHigh speed IGBT IXGH 10 N100A 1000 V 20 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C20 AG = Gate, C = Collector,IC90 TC = 90C10 AE = Emitter, TAB = Col

 6.1. Size:565K  ixys
 ixgh10n170a ixgt10n170a.pdf

IXGH10N100U1 IXGH10N100U1

IXGH 10N170AVCES = 1700 VHigh VoltageIXGT 10N170AIC25 = 10 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 35 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C10 ATO-247 AD (IXGH)IC90 TC = 90C5 AICM

 6.2. Size:562K  ixys
 ixgh10n170a.pdf

IXGH10N100U1 IXGH10N100U1

IXGH 10N170AVCES = 1700 VHigh VoltageIXGT 10N170AIC25 = 10 AIGBTVCE(sat) = 6.0 Vtfi(typ) = 35 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-268 (IXGT)VCES TJ = 25C to 150C 1700 VVCGR TJ = 25C to 150C; RGE = 1 M 1700 VGVGES Continuous 20 VEC (TAB)VGEM Transient 30 VIC25 TC = 25C10 ATO-247 AD (IXGH)IC90 TC = 90C5 AICM

 6.3. Size:187K  ixys
 ixgh10n170.pdf

IXGH10N100U1 IXGH10N100U1

VCES = 1700VHigh Voltage IXGH10N170IC90 = 10AIGBT IXGT10N170VCE(sat) 4.0VTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGVCES TC = 25C to 150C 1700 VC C (TAB)EVCGR TJ = 25C to 150C, RGE = 1M 1700 VVGES Continuous 20 VTO-268 (IXGT)VGEM Transient 30 VIC25 TC = 25C 20 AGEIC90 TC = 90C 10 AC (TAB)ICM TC = 25C,

Datasheet: IXGA8N100 , IXGH32N60AU1S , IXGH40N30AS , IXGH40N30BS , IXGH50N60AS , IXGT32N60B , IXSM25N100 , IXSM25N100A , FGW75N60HD , IXGH10N100 , IXGH10N100A , IXGH10N100AU1 , IXGH12N100 , IXGH12N100A , IXGH12N100AU1 , IXGH12N100U1 , IXGH12N60B .

 

 
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