All IGBT. NCE75TS120VTP Datasheet

 

NCE75TS120VTP IGBT. Datasheet pdf. Equivalent


   Type Designator: NCE75TS120VTP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 833
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 150
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 17
   Collector Capacity (Cc), typ, pF: 327
   Total Gate Charge (Qg), typ, nC: 572
   Package: TO247P

 NCE75TS120VTP Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NCE75TS120VTP Datasheet (PDF)

 ..1. Size:473K  ncepower
nce75ts120vtp.pdf

NCE75TS120VTP
NCE75TS120VTP

PbFreeProduct NCE75TS120VTP 1200V, 75A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s

 8.1. Size:469K  ncepower
nce75td120vtp.pdf

NCE75TS120VTP
NCE75TS120VTP

PbFreeProduct NCE75TD120VTP 1200V, 75A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s

 9.1. Size:427K  1
nce7580.pdf

NCE75TS120VTP
NCE75TS120VTP

NCE7580http://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio

 9.2. Size:688K  ncepower
nce75h25t.pdf

NCE75TS120VTP
NCE75TS120VTP

http://www.ncepower.comNCE75H25TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE75H25T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

 9.3. Size:361K  ncepower
nce75h21t.pdf

NCE75TS120VTP
NCE75TS120VTP

Pb Free Producthttp://www.ncepower.com NCE75H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.4. Size:393K  ncepower
nce75h21.pdf

NCE75TS120VTP
NCE75TS120VTP

http://www.ncepower.com NCE75H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.5. Size:460K  ncepower
nce7580.pdf

NCE75TS120VTP
NCE75TS120VTP

NCE7580http://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio

 9.6. Size:650K  ncepower
nce75h25.pdf

NCE75TS120VTP
NCE75TS120VTP

http://www.ncepower.comNCE75H25NCE N-Channel Enhancement Mode Power MOSFET (Primary)DescriptionThe NCE75H25 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

 9.7. Size:293K  ncepower
nce75h21d.pdf

NCE75TS120VTP
NCE75TS120VTP

http://www.ncepower.com NCE75H21DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.8. Size:338K  ncepower
nce75h35tc.pdf

NCE75TS120VTP
NCE75TS120VTP

Pb Free Producthttp://www.ncepower.com NCE75H35TCNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =350A Schematic diagram RDS(ON)

 9.9. Size:478K  ncepower
nce7560k.pdf

NCE75TS120VTP
NCE75TS120VTP

NCE7560Khttp://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7560K uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 m charge. It can be used in a wide variety of applications. max. 8.5 m ID 60 A Features VDS=75V

Datasheet: NCE40TD60BP , NCE40TD60BT , NCE40TD65BT , NCE40TH60BP , NCE40TS120VTP , NCE60TD60BP , NCE60TD60BT , NCE75TD120VTP , IRG4PC50W , NCE80TD60BP , NCE80TD60BT , STGB10M65DF2 , STGB10NC60KDT4 , STGD10NC60KDT4 , STGB14NC60KDT4 , STGB15M65DF2 , STGB19NC60HDT4 .

 

 
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