Справочник IGBT. NCE75TS120VTP

 

NCE75TS120VTP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NCE75TS120VTP
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 833
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 150
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.7
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 17
   Емкость коллектора типовая (Cc), pf: 327
   Общий заряд затвора (Qg), typ, nC: 572
   Тип корпуса: TO247P

 Аналог (замена) для NCE75TS120VTP

 

 

NCE75TS120VTP Datasheet (PDF)

 ..1. Size:473K  ncepower
 nce75ts120vtp.pdf

NCE75TS120VTP NCE75TS120VTP

PbFreeProduct NCE75TS120VTP 1200V, 75A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s

 8.1. Size:469K  ncepower
 nce75td120vtp.pdf

NCE75TS120VTP NCE75TS120VTP

PbFreeProduct NCE75TD120VTP 1200V, 75A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed s

 9.1. Size:427K  1
 nce7580.pdf

NCE75TS120VTP NCE75TS120VTP

NCE7580http://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio

 9.2. Size:688K  ncepower
 nce75h25t.pdf

NCE75TS120VTP NCE75TS120VTP

http://www.ncepower.comNCE75H25TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE75H25T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

 9.3. Size:361K  ncepower
 nce75h21t.pdf

NCE75TS120VTP NCE75TS120VTP

Pb Free Producthttp://www.ncepower.com NCE75H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.4. Size:393K  ncepower
 nce75h21.pdf

NCE75TS120VTP NCE75TS120VTP

http://www.ncepower.com NCE75H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.5. Size:460K  ncepower
 nce7580.pdf

NCE75TS120VTP NCE75TS120VTP

NCE7580http://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7580 uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 6.5 m This device is suitable for use in PWM, load switching and max. 8.0 m general purpose applicatio

 9.6. Size:650K  ncepower
 nce75h25.pdf

NCE75TS120VTP NCE75TS120VTP

http://www.ncepower.comNCE75H25NCE N-Channel Enhancement Mode Power MOSFET (Primary)DescriptionThe NCE75H25 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

 9.7. Size:293K  ncepower
 nce75h21d.pdf

NCE75TS120VTP NCE75TS120VTP

http://www.ncepower.com NCE75H21DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 9.8. Size:338K  ncepower
 nce75h35tc.pdf

NCE75TS120VTP NCE75TS120VTP

Pb Free Producthttp://www.ncepower.com NCE75H35TCNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =350A Schematic diagram RDS(ON)

 9.9. Size:478K  ncepower
 nce7560k.pdf

NCE75TS120VTP NCE75TS120VTP

NCE7560Khttp://www.ncepower.com Pb-Free ProductNCE N-Channel Enhancement Mode Power MOSFET Product Summary General Description The NCE7560K uses advanced trench technology and BVDSS typ. 84 V design to provide excellent RDS(ON) with low gate RDS(ON) typ. 6.8 m charge. It can be used in a wide variety of applications. max. 8.5 m ID 60 A Features VDS=75V

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