All IGBT. STGB10NC60KDT4 Datasheet

 

STGB10NC60KDT4 IGBT. Datasheet pdf. Equivalent


   Type Designator: STGB10NC60KDT4
   Type: IGBT + Anti-Parallel Diode
   Marking Code: GB10NC60KD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 65 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 6 nS
   Coesⓘ - Output Capacitance, typ: 46 pF
   Qgⓘ - Total Gate Charge, typ: 19 nC
   Package: D2PAK

 STGB10NC60KDT4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

STGB10NC60KDT4 Datasheet (PDF)

 ..1. Size:1653K  st
 stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf

STGB10NC60KDT4 STGB10NC60KDT4

STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IESsusceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor

 2.1. Size:605K  st
 stgb10nc60kd.pdf

STGB10NC60KDT4 STGB10NC60KDT4

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 2.2. Size:607K  st
 stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf

STGB10NC60KDT4 STGB10NC60KDT4

STGB10NC60KD, STGD10NC60KDSTGF10NC60KD, STGP10NC60KD10 A, 600 V short-circuit rugged IGBTFeaturesTABTAB Lower on voltage drop (VCE(sat))3 Lower CRES / CIES ratio (no cross-conduction 131susceptibility)DPAK Very soft ultra fast recovery antiparallel diode D2PAKTAB Short-circuit withstand time 10sDescriptionThis IGBT utilizes the advanced PowerM

 3.1. Size:608K  st
 stgb10nc60k stgp10nc60k stgd10nc60k.pdf

STGB10NC60KDT4 STGB10NC60KDT4

STGB10NC60K - STGD10NC60KSTGP10NC60KN-channel 600V - 10A - D2PAK / TO-220 / DPAKShort circuit rated PowerMESH IGBTGeneral featuresICVCE(sat)MaxType VCES@25C @100CSTGB10NC60K 600V

 3.2. Size:363K  st
 stgb10nc60k.pdf

STGB10NC60KDT4 STGB10NC60KDT4

STGB10NC60K10 A, 600 V short-circuit rugged IGBTFeatures Low on voltage drop (VCESAT) Short-circuit withstand time 10 sTABApplications High frequency motor controls31 SMPS and PFC in both hard switch and resonant topologiesDPAK Motor drivesDescriptionThis device utilizes the advanced Power MESH Figure 1. Internal schematic diagramprocess r

Datasheet: NCE40TS120VTP , NCE60TD60BP , NCE60TD60BT , NCE75TD120VTP , NCE75TS120VTP , NCE80TD60BP , NCE80TD60BT , STGB10M65DF2 , IRG4PC40UD , STGD10NC60KDT4 , STGB14NC60KDT4 , STGB15M65DF2 , STGB19NC60HDT4 , STGB19NC60KDT4 , STGB20H65DFB2 , STGB20M65DF2 , STGB30H60DFB .

 

 
Back to Top