2SH16 Datasheet and Replacement
Type Designator: 2SH16
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 700 nS
Package: TO3PL
- IGBT Cross-Reference
2SH16 Datasheet (PDF)
2sh16.pdf

ADE208289 (Z)2SH16Silicon N-Channel IGBT1st. EditionNov. 1994ApplicationTO3PLHigh speed power switchingFeatures2 High speed switching Low on saturation voltage11. Gate32. Collector13. Emitter23Table 1 Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings Unit
Datasheet: 2PG352 , 2PG401 , 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , IRGP4066D , 2SH17 , 2SH18 , 2SH19 , 2SH20 , 2SH21 , 2SH22 , 2SH26 , 2SH27 .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - 2SH16 transistor datasheet
2SH16 cross reference
2SH16 equivalent finder
2SH16 lookup
2SH16 substitution
2SH16 replacement
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL



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